TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
4# session of series »Powering the Future - Technologies for Power Electronics Modules with SiC and GaN Semiconductors« (Speaker: Lars Böttcher) The expert session will give an insight into the ...
More efficient, smaller, and lighter traction inverters for EVs can be created by integrating current sensors directly into SiC-based power modules. Silicon Austria Labs (SAL), a power semiconductor ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3 ...
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